symbol v ds v gs i dm iar ear t j , t stg symbol typ max 31 40 59 75 r q jl 16 24 avalanche current c 17 a repetitive avalanche energy l=0.1mh c 14 mj pulsed drain current c 60 t a =70c 7.0 continuous drain current t a =25c i d 9.0 maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w 30 c/w absolute maximum ratings t a =25c unless otherwise noted v v 25 gate-source voltage drain-source voltage maximum junction-to-ambient ad steady-state maximum units parameter junction and storage temperature range c -55 to 150 3.1 w t a =70c 2.0 power dissipation b t a =25c p d AO4478 v ds (v) = 30v i d = 9a (v gs = 10v) r ds(on) <19m w (v gs = 10v) r ds(on) <26m w (v gs = 4.5v) the AO4478 uses advanced trench technology to provide excellent r ds(on) , low gate charge. this device is suitable for use as general puspose, pwm and a load switch applications. g d s www.freescale.net.cn 1/6 30v n-channel mosfet general description features
symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.6 2 v i d(on) 60 a 16 19 t j =125c 25 30 21 26 m w g fs 24 s v sd 0.70 1 v i s 4 a c iss 466 560 pf c oss 90 pf c rss 61 pf r g 3.7 5.6 w q g (10v) 9.3 11 nc q g (4.5v) 4.3 5.2 nc q gs 1 nc q gd 2.3 nc t d(on) 5 ns t r 8 ns t d(off) 20 ns t f 5 ns t rr 7.5 9 ns q rr 9.8 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =9a, di/dt=500a/ m s drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =9a reverse transfer capacitance i f =9a, di/dt=500a/ m s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss ua gate threshold voltage v ds =v gs i d =250 m a v ds =30v, v gs =0v v ds =0v, v gs = 25v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage maximum body-diode continuous current input capacitance output capacitance dynamic parameters m w v gs =4.5v, i d =8a i s =1a,v gs =0v v ds =5v, i d =10a turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.65 w , r gen =3 w turn-off fall time turn-on delaytime gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =9a rev1: nov. 2010 a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. ratings are based on low frequency and duty cycl es to keep initialt j =25c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150c. the soa curve provides a single pulse ratin g. www.freescale.net.cn 2/6 AO4478 30v n-channel mosfet
typical electrical and thermal characteristics 0 10 20 30 40 50 60 70 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics(note e) i d (a) 4v 4.5v 10v 2.5v 7v 0 5 10 15 20 25 30 0 1 2 3 4 5 v gs (volts) figure 2: transfer characteristics(note e) i d (a) 25c 125c v ds = 5v 5 10 15 20 25 30 35 40 0 5 10 15 20 25 i d (a) figure 3: on-resistance vs. drain current and gate voltage(note e) r ds(on) (m w w w w ) v gs =10v v gs =4.5v 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics(note e) i s (a) 25c 125c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature(note e) normalized on-resistance 10 20 30 40 50 60 70 2 3 4 5 6 7 8 9 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage(note e) r ds(on) (m w w w w ) i d =9a 25c 125c v gs = 3v v gs =4.5v i d =8a v gs =10v i d =9a www.freescale.net.cn 3/6 AO4478 30v n-channel mosfet
typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 10 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =15v i d =9a t a =150c t a =25c 0.01 0.1 1 10 100 1000 0.1 1 10 100 v ds (volts) i d (amps) figure 10: maximum forward biased safe operating area (note f) 100 m s 10ms 1ms 100ms 10s dc r ds(on) limited t j(max) =150c t a =25c 10 m s 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 11: single pulse power rating junction-to-am bient (note f) power (w) t j(max) =150c t a =25c 0 10 20 30 40 50 60 70 0.000001 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 9: single pulse avalanche capability (note c) i d (a), peak avalanche current t a =125c t a =100c t a =25c t a =150c www.freescale.net.cn 4/6 AO4478 30v n-channel mosfet
typical electrical and thermal characteristics single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) z q q q q ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =75c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse www.freescale.net.cn 5/6 AO4478 30v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr www.freescale.net.cn 6/6 AO4478 30v n-channel mosfet
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